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GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy

Barrigón, E. LU ; Hultin, O. LU ; Lindgren, D.; Yadegari, F.; Magnusson, M. H. LU ; Samuelson, L. LU ; Johansson, L. I.M. and Björk, M. T. LU (2018) In Nano Letters 18(2). p.1088-1092
Abstract

Semiconductor nanowires could significantly boost the functionality and performance of future electronics, light-emitting diodes, and solar cells. However, realizing this potential requires growth methods that enable high-throughput and low-cost production of nanowires with controlled doping. Aerotaxy is an aerosol-based method with extremely high growth rate that does not require a growth substrate, allowing mass-production of high-quality nanowires at a low cost. So far, pn-junctions, a crucial element of solar cells and light-emitting diodes, have not been realized by Aerotaxy growth. Here we report a further development of the Aerotaxy method and demonstrate the growth of GaAs nanowire pn-junctions. Our Aerotaxy system uses an... (More)

Semiconductor nanowires could significantly boost the functionality and performance of future electronics, light-emitting diodes, and solar cells. However, realizing this potential requires growth methods that enable high-throughput and low-cost production of nanowires with controlled doping. Aerotaxy is an aerosol-based method with extremely high growth rate that does not require a growth substrate, allowing mass-production of high-quality nanowires at a low cost. So far, pn-junctions, a crucial element of solar cells and light-emitting diodes, have not been realized by Aerotaxy growth. Here we report a further development of the Aerotaxy method and demonstrate the growth of GaAs nanowire pn-junctions. Our Aerotaxy system uses an aerosol generator for producing the catalytic seed particles, together with a growth reactor with multiple consecutive chambers for growth of material with different dopants. We show that the produced nanowire pn-junctions have excellent diode characteristics with a rectification ratio of >105, an ideality factor around 2, and very promising photoresponse. Using electron beam induced current and hyperspectral cathodoluminescence, we determined the location of the pn-junction and show that the grown nanowires have high doping levels, as well as electrical properties and diffusion lengths comparable to nanowires grown using metal organic vapor phase epitaxy. Our findings demonstrate that high-quality GaAs nanowire pn-junctions can be produced using a low-cost technique suitable for mass-production, paving the way for industrial-scale production of nanowire-based solar cells.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Aerotaxy, electron beam induced current, GaAs, hyperspectral cathodoluminescence, nanowires, pn-junction, EU Horizon H2020, NEXTNANOCELLS, Grant 656208
in
Nano Letters
volume
18
issue
2
pages
5 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85042077322
ISSN
1530-6984
DOI
10.1021/acs.nanolett.7b04609
language
English
LU publication?
yes
id
c6796a25-37c5-4d40-a345-b5efe2e04316
date added to LUP
2018-03-06 11:06:24
date last changed
2018-10-07 05:05:00
@article{c6796a25-37c5-4d40-a345-b5efe2e04316,
  abstract     = {<p>Semiconductor nanowires could significantly boost the functionality and performance of future electronics, light-emitting diodes, and solar cells. However, realizing this potential requires growth methods that enable high-throughput and low-cost production of nanowires with controlled doping. Aerotaxy is an aerosol-based method with extremely high growth rate that does not require a growth substrate, allowing mass-production of high-quality nanowires at a low cost. So far, pn-junctions, a crucial element of solar cells and light-emitting diodes, have not been realized by Aerotaxy growth. Here we report a further development of the Aerotaxy method and demonstrate the growth of GaAs nanowire pn-junctions. Our Aerotaxy system uses an aerosol generator for producing the catalytic seed particles, together with a growth reactor with multiple consecutive chambers for growth of material with different dopants. We show that the produced nanowire pn-junctions have excellent diode characteristics with a rectification ratio of &gt;10<sup>5</sup>, an ideality factor around 2, and very promising photoresponse. Using electron beam induced current and hyperspectral cathodoluminescence, we determined the location of the pn-junction and show that the grown nanowires have high doping levels, as well as electrical properties and diffusion lengths comparable to nanowires grown using metal organic vapor phase epitaxy. Our findings demonstrate that high-quality GaAs nanowire pn-junctions can be produced using a low-cost technique suitable for mass-production, paving the way for industrial-scale production of nanowire-based solar cells.</p>},
  author       = {Barrigón, E. and Hultin, O. and Lindgren, D. and Yadegari, F. and Magnusson, M. H. and Samuelson, L. and Johansson, L. I.M. and Björk, M. T.},
  issn         = {1530-6984},
  keyword      = {Aerotaxy,electron beam induced current,GaAs,hyperspectral cathodoluminescence,nanowires,pn-junction,EU Horizon H2020,NEXTNANOCELLS,Grant 656208 },
  language     = {eng},
  month        = {02},
  number       = {2},
  pages        = {1088--1092},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b04609},
  volume       = {18},
  year         = {2018},
}