Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering
(1996) In Journal of Materials Research 11(10). p.2458-2462- Abstract
- Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double... (More)
- Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10-3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm-3. (Less)
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- author
- Hultman, L ; Ljungcrantz, H ; Hallin, C ; Janzen, E ; Sundgren, JE ; Pecz, B and Wallenberg, LR LU
- organization
- publishing date
- 1996-10-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Materials Research
- volume
- 11
- issue
- 10
- pages
- 5 pages
- publisher
- Materials Research Society
- external identifiers
-
- scopus:0030257396
- ISSN
- 0884-2914
- DOI
- 10.1557/JMR.1996.0309
- language
- English
- LU publication?
- yes
- id
- c8d3f145-af41-44b4-b1e2-3fe59ad5aba2
- date added to LUP
- 2023-10-31 15:53:11
- date last changed
- 2023-11-03 08:40:43
@article{c8d3f145-af41-44b4-b1e2-3fe59ad5aba2, abstract = {{Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10-3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm-3.}}, author = {{Hultman, L and Ljungcrantz, H and Hallin, C and Janzen, E and Sundgren, JE and Pecz, B and Wallenberg, LR}}, issn = {{0884-2914}}, language = {{eng}}, month = {{10}}, number = {{10}}, pages = {{2458--2462}}, publisher = {{Materials Research Society}}, series = {{Journal of Materials Research}}, title = {{Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering}}, url = {{http://dx.doi.org/10.1557/JMR.1996.0309}}, doi = {{10.1557/JMR.1996.0309}}, volume = {{11}}, year = {{1996}}, }