Advanced

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

Cutaia, Davide; Schmid, Heinz; Borg, Mattias LU ; Moselund, Kirsten E.; Bologna, Nicolas; Olziersky, Antonis; Ionescu, Adrian and Riel, Heike (2016) 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 p.152-153
Abstract

We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at... (More)

We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.

(Less)
Please use this url to cite or link to this publication:
author
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
pages
2 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
external identifiers
  • scopus:84994750609
ISBN
9781509007264
DOI
10.1109/SNW.2016.7578028
language
English
LU publication?
no
id
c90730c8-30a1-48e0-a73e-6ec37f94f6f0
date added to LUP
2017-03-02 13:54:47
date last changed
2017-08-13 05:05:19
@inproceedings{c90730c8-30a1-48e0-a73e-6ec37f94f6f0,
  abstract     = {<p>We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in &gt; 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.</p>},
  author       = {Cutaia, Davide and Schmid, Heinz and Borg, Mattias and Moselund, Kirsten E. and Bologna, Nicolas and Olziersky, Antonis and Ionescu, Adrian and Riel, Heike},
  booktitle    = {2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016},
  isbn         = {9781509007264},
  language     = {eng},
  month        = {09},
  pages        = {152--153},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs},
  url          = {http://dx.doi.org/10.1109/SNW.2016.7578028},
  year         = {2016},
}