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Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

Cutaia, Davide ; Schmid, Heinz ; Borg, Mattias LU orcid ; Moselund, Kirsten E. ; Bologna, Nicolas ; Olziersky, Antonis ; Ionescu, Adrian and Riel, Heike (2016) 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 p.152-153
Abstract

We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at... (More)

We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.

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author
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
article number
7578028
pages
2 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
conference location
Honolulu, United States
conference dates
2016-06-12 - 2016-06-13
external identifiers
  • scopus:84994750609
ISBN
9781509007264
DOI
10.1109/SNW.2016.7578028
language
English
LU publication?
no
id
c90730c8-30a1-48e0-a73e-6ec37f94f6f0
date added to LUP
2017-03-02 13:54:47
date last changed
2023-10-19 03:48:25
@inproceedings{c90730c8-30a1-48e0-a73e-6ec37f94f6f0,
  abstract     = {{<p>We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in &gt; 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.</p>}},
  author       = {{Cutaia, Davide and Schmid, Heinz and Borg, Mattias and Moselund, Kirsten E. and Bologna, Nicolas and Olziersky, Antonis and Ionescu, Adrian and Riel, Heike}},
  booktitle    = {{2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016}},
  isbn         = {{9781509007264}},
  language     = {{eng}},
  month        = {{09}},
  pages        = {{152--153}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs}},
  url          = {{http://dx.doi.org/10.1109/SNW.2016.7578028}},
  doi          = {{10.1109/SNW.2016.7578028}},
  year         = {{2016}},
}