Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
(2016) 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 p.152-153- Abstract
We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at... (More)
We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.
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- author
- Cutaia, Davide ; Schmid, Heinz ; Borg, Mattias LU ; Moselund, Kirsten E. ; Bologna, Nicolas ; Olziersky, Antonis ; Ionescu, Adrian and Riel, Heike
- organization
- publishing date
- 2016-09-27
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
- article number
- 7578028
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
- conference location
- Honolulu, United States
- conference dates
- 2016-06-12 - 2016-06-13
- external identifiers
-
- scopus:84994750609
- ISBN
- 9781509007264
- DOI
- 10.1109/SNW.2016.7578028
- language
- English
- LU publication?
- no
- id
- c90730c8-30a1-48e0-a73e-6ec37f94f6f0
- date added to LUP
- 2017-03-02 13:54:47
- date last changed
- 2023-10-19 03:48:25
@inproceedings{c90730c8-30a1-48e0-a73e-6ec37f94f6f0, abstract = {{<p>We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.</p>}}, author = {{Cutaia, Davide and Schmid, Heinz and Borg, Mattias and Moselund, Kirsten E. and Bologna, Nicolas and Olziersky, Antonis and Ionescu, Adrian and Riel, Heike}}, booktitle = {{2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016}}, isbn = {{9781509007264}}, language = {{eng}}, month = {{09}}, pages = {{152--153}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs}}, url = {{http://dx.doi.org/10.1109/SNW.2016.7578028}}, doi = {{10.1109/SNW.2016.7578028}}, year = {{2016}}, }