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InP Quantum Dots with a Strain-Engineered Gradient Shell for Enhanced Optical Performance and Stability

Duan, Xijian ; Zhang, Wenda ; Hao, Junjie ; Liu, Ronghuan ; Xu, Bing ; Jin, Lei ; Samuelson, Lars LU and Sun, Xiao Wei (2025) In Nano Letters 25(36). p.13539-13548
Abstract

InP quantum dots have emerged as a promising ecofriendly alternative to cadmium-based QDs for next-generation display applications. However, red-emitting InP QDs synthesized via aminophosphine precursors still suffer from broad emission spectra and limited stability. In this study, we present a strain-engineered InP/ZnSe/ZnSexS1-x/ZnS QD structure featuring a gradient alloyed ZnSexS1-x shell that effectively mitigates lattice mismatch, reduces strain accumulation, and enhances shell uniformity. Through systematic analysis, we elucidate the strain distribution profiles across different shell architectures and the corresponding defect types induced by strain. This approach enables the controlled growth of a thick ZnS shell, improving... (More)

InP quantum dots have emerged as a promising ecofriendly alternative to cadmium-based QDs for next-generation display applications. However, red-emitting InP QDs synthesized via aminophosphine precursors still suffer from broad emission spectra and limited stability. In this study, we present a strain-engineered InP/ZnSe/ZnSexS1-x/ZnS QD structure featuring a gradient alloyed ZnSexS1-x shell that effectively mitigates lattice mismatch, reduces strain accumulation, and enhances shell uniformity. Through systematic analysis, we elucidate the strain distribution profiles across different shell architectures and the corresponding defect types induced by strain. This approach enables the controlled growth of a thick ZnS shell, improving passivation and minimizing nonradiative recombination. As a result, the optimized QDs exhibit a narrow full width at half-maximum of 45 nm, a high photoluminescence quantum yield of ≥80%, and significantly enhanced photochemical stability. This work highlights the critical role of strain management in achieving high-performance InP QDs for practical applications.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
alloyed shell, indium phosphide, quantum dots, stability, strain
in
Nano Letters
volume
25
issue
36
pages
10 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:40879067
  • scopus:105015747233
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5c03042
language
English
LU publication?
yes
id
ca6f87dd-dd2d-4d05-a4ab-1ba20be91bcc
date added to LUP
2025-10-14 15:48:28
date last changed
2025-10-14 15:49:10
@article{ca6f87dd-dd2d-4d05-a4ab-1ba20be91bcc,
  abstract     = {{<p>InP quantum dots have emerged as a promising ecofriendly alternative to cadmium-based QDs for next-generation display applications. However, red-emitting InP QDs synthesized via aminophosphine precursors still suffer from broad emission spectra and limited stability. In this study, we present a strain-engineered InP/ZnSe/ZnSexS1-x/ZnS QD structure featuring a gradient alloyed ZnSexS1-x shell that effectively mitigates lattice mismatch, reduces strain accumulation, and enhances shell uniformity. Through systematic analysis, we elucidate the strain distribution profiles across different shell architectures and the corresponding defect types induced by strain. This approach enables the controlled growth of a thick ZnS shell, improving passivation and minimizing nonradiative recombination. As a result, the optimized QDs exhibit a narrow full width at half-maximum of 45 nm, a high photoluminescence quantum yield of ≥80%, and significantly enhanced photochemical stability. This work highlights the critical role of strain management in achieving high-performance InP QDs for practical applications.</p>}},
  author       = {{Duan, Xijian and Zhang, Wenda and Hao, Junjie and Liu, Ronghuan and Xu, Bing and Jin, Lei and Samuelson, Lars and Sun, Xiao Wei}},
  issn         = {{1530-6992}},
  keywords     = {{alloyed shell; indium phosphide; quantum dots; stability; strain}},
  language     = {{eng}},
  number       = {{36}},
  pages        = {{13539--13548}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{InP Quantum Dots with a Strain-Engineered Gradient Shell for Enhanced Optical Performance and Stability}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.5c03042}},
  doi          = {{10.1021/acs.nanolett.5c03042}},
  volume       = {{25}},
  year         = {{2025}},
}