Halogen-Bonded Hole-Transport Material Enhances Open-Circuit Voltage of Inverted Perovskite Solar Cells
Chen, Zhaoyang ; Zhang, Jiakang ; Chen, Zilong ; Yao, Zef-an ; Liu, Kai-kai ; Zhou, Zhongmin ; Zhang, Haichang and Liu, Maning LU
(2024)
In Advanced Science
11(46).
- Abstract
- Interfacial properties of a hole-transport material (HTM) and a
perovskite layer are of high importance, which can influence the
interfacial charge transfer dynamics as well as the growth of perovskite
bulk crystals particularly in inverted structure. The halogen bonding
(XB) has been recognized as a powerful functional group to be integrated
with new small molecule HTMs. Herein, a carbazole-based halo
(iodine)-functional HTM (O1), is synthesized for the first time,
demonstrating a high hole mobility and suitable energy levels that align
well with those of perovskites. The strong interaction between O1 and
perovskite, i.e., I···I−, induces the formation of an ordered
interlayer,... (More) - Interfacial properties of a hole-transport material (HTM) and a
perovskite layer are of high importance, which can influence the
interfacial charge transfer dynamics as well as the growth of perovskite
bulk crystals particularly in inverted structure. The halogen bonding
(XB) has been recognized as a powerful functional group to be integrated
with new small molecule HTMs. Herein, a carbazole-based halo
(iodine)-functional HTM (O1), is synthesized for the first time,
demonstrating a high hole mobility and suitable energy levels that align
well with those of perovskites. The strong interaction between O1 and
perovskite, i.e., I···I−, induces the formation of an ordered
interlayer, which are verified by both theoretical and experimental
studies. Compared to the reference HTM (O2) without any halo-function,
the XB-induced interlayer effectively enhances the interfacial charge
extraction efficiency, while significantly hindering the non-radiative
charge recombination by reducing the surface traps upon the strong
passivation effect. This is reflected as a big increase in the
open-circuit voltage by up to 114 mV in the fabrication of inverted
devices with the highest power conversion efficiency of 22.34%.
Moreover, the ordered XB-driven interlayer at the interface of O1 and
perovskite is mainly responsible for the extended lifespan under the
operational conditions. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/d349b9bf-5aec-447d-a59d-31bbe7844d33
- author
- Chen, Zhaoyang
; Zhang, Jiakang
; Chen, Zilong
; Yao, Zef-an
; Liu, Kai-kai
; Zhou, Zhongmin
; Zhang, Haichang
and Liu, Maning
LU
- organization
- publishing date
- 2024-10-22
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Advanced Science
- volume
- 11
- issue
- 46
- article number
- 2411567
- pages
- 10 pages
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:85206949933
- pmid:39435636
- ISSN
- 2198-3844
- DOI
- 10.1002/advs.202411567
- language
- English
- LU publication?
- yes
- id
- d349b9bf-5aec-447d-a59d-31bbe7844d33
- date added to LUP
- 2024-12-11 08:34:44
- date last changed
- 2025-04-04 14:24:45
@article{d349b9bf-5aec-447d-a59d-31bbe7844d33,
abstract = {{Interfacial properties of a hole-transport material (HTM) and a <br>
perovskite layer are of high importance, which can influence the <br>
interfacial charge transfer dynamics as well as the growth of perovskite<br>
bulk crystals particularly in inverted structure. The halogen bonding <br>
(XB) has been recognized as a powerful functional group to be integrated<br>
with new small molecule HTMs. Herein, a carbazole-based halo <br>
(iodine)-functional HTM (O1), is synthesized for the first time, <br>
demonstrating a high hole mobility and suitable energy levels that align<br>
well with those of perovskites. The strong interaction between O1 and <br>
perovskite, i.e., I···I<sup>−</sup>, induces the formation of an ordered<br>
interlayer, which are verified by both theoretical and experimental <br>
studies. Compared to the reference HTM (O2) without any halo-function, <br>
the XB-induced interlayer effectively enhances the interfacial charge <br>
extraction efficiency, while significantly hindering the non-radiative <br>
charge recombination by reducing the surface traps upon the strong <br>
passivation effect. This is reflected as a big increase in the <br>
open-circuit voltage by up to 114 mV in the fabrication of inverted <br>
devices with the highest power conversion efficiency of 22.34%. <br>
Moreover, the ordered XB-driven interlayer at the interface of O1 and <br>
perovskite is mainly responsible for the extended lifespan under the <br>
operational conditions.}},
author = {{Chen, Zhaoyang and Zhang, Jiakang and Chen, Zilong and Yao, Zef-an and Liu, Kai-kai and Zhou, Zhongmin and Zhang, Haichang and Liu, Maning}},
issn = {{2198-3844}},
language = {{eng}},
month = {{10}},
number = {{46}},
publisher = {{John Wiley & Sons Inc.}},
series = {{Advanced Science}},
title = {{Halogen-Bonded Hole-Transport Material Enhances Open-Circuit Voltage of Inverted Perovskite Solar Cells}},
url = {{http://dx.doi.org/10.1002/advs.202411567}},
doi = {{10.1002/advs.202411567}},
volume = {{11}},
year = {{2024}},
}