Advanced

Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs

Berg, Martin LU ; Persson, Karl-Magnus LU ; Lind, Erik LU ; Sjöland, Henrik LU and Wernersson, Lars-Erik LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
Abstract
We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
26th International Conference on Indium Phosphideand Related Materials (IPRM)
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
26th International Conference on Indium Phosphide and Related Materials (IPRM)
conference location
Montpellier, FRANCE
conference dates
2014-05-11 - 2014-05-15
external identifiers
  • wos:000346124000056
  • scopus:84906739388
ISSN
1092-8669
language
English
LU publication?
yes
id
d3856444-bb80-4300-84ff-78b6818eedb7 (old id 4962481)
date added to LUP
2015-01-28 16:47:32
date last changed
2019-04-30 21:37:59
@inproceedings{d3856444-bb80-4300-84ff-78b6818eedb7,
  abstract     = {We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.},
  author       = {Berg, Martin and Persson, Karl-Magnus and Lind, Erik and Sjöland, Henrik and Wernersson, Lars-Erik},
  issn         = {1092-8669},
  language     = {eng},
  location     = {Montpellier, FRANCE},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs},
  year         = {2014},
}