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Coulomb engineering of two-dimensional Mott materials

van Loon, Erik G.C.P. LU ; Schüler, Malte ; Springer, Daniel ; Sangiovanni, Giorgio ; Tomczak, Jan M. and Wehling, Tim O. (2023) In npj 2D Materials and Applications 7(1).
Abstract

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be... (More)

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

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Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
npj 2D Materials and Applications
volume
7
issue
1
article number
47
publisher
Nature Publishing Group
external identifiers
  • scopus:85164249436
ISSN
2397-7132
DOI
10.1038/s41699-023-00408-x
language
English
LU publication?
yes
id
d5376862-dc8e-4edb-9442-54bf110a1d83
date added to LUP
2023-08-29 15:14:08
date last changed
2023-11-08 10:19:58
@article{d5376862-dc8e-4edb-9442-54bf110a1d83,
  abstract     = {{<p>Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.</p>}},
  author       = {{van Loon, Erik G.C.P. and Schüler, Malte and Springer, Daniel and Sangiovanni, Giorgio and Tomczak, Jan M. and Wehling, Tim O.}},
  issn         = {{2397-7132}},
  language     = {{eng}},
  number       = {{1}},
  publisher    = {{Nature Publishing Group}},
  series       = {{npj 2D Materials and Applications}},
  title        = {{Coulomb engineering of two-dimensional Mott materials}},
  url          = {{http://dx.doi.org/10.1038/s41699-023-00408-x}},
  doi          = {{10.1038/s41699-023-00408-x}},
  volume       = {{7}},
  year         = {{2023}},
}