Coulomb engineering of two-dimensional Mott materials
(2023) In npj 2D Materials and Applications 7(1).- Abstract
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be... (More)
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
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- author
- van Loon, Erik G.C.P. LU ; Schüler, Malte ; Springer, Daniel ; Sangiovanni, Giorgio ; Tomczak, Jan M. and Wehling, Tim O.
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- in
- npj 2D Materials and Applications
- volume
- 7
- issue
- 1
- article number
- 47
- publisher
- Nature Publishing Group
- external identifiers
-
- scopus:85164249436
- pmid:38665482
- ISSN
- 2397-7132
- DOI
- 10.1038/s41699-023-00408-x
- language
- English
- LU publication?
- yes
- id
- d5376862-dc8e-4edb-9442-54bf110a1d83
- date added to LUP
- 2023-08-29 15:14:08
- date last changed
- 2024-06-16 09:53:09
@article{d5376862-dc8e-4edb-9442-54bf110a1d83, abstract = {{<p>Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.</p>}}, author = {{van Loon, Erik G.C.P. and Schüler, Malte and Springer, Daniel and Sangiovanni, Giorgio and Tomczak, Jan M. and Wehling, Tim O.}}, issn = {{2397-7132}}, language = {{eng}}, number = {{1}}, publisher = {{Nature Publishing Group}}, series = {{npj 2D Materials and Applications}}, title = {{Coulomb engineering of two-dimensional Mott materials}}, url = {{http://dx.doi.org/10.1038/s41699-023-00408-x}}, doi = {{10.1038/s41699-023-00408-x}}, volume = {{7}}, year = {{2023}}, }