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Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

Mazzola, F.; Wells, J. W. LU ; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B. LU ; Hofmann, Ph and Miwa, J. A. (2018) In Physical Review Letters 120(4).
Abstract

We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong... (More)

We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Letters
volume
120
issue
4
publisher
American Physical Society
external identifiers
  • scopus:85041127647
ISSN
0031-9007
DOI
10.1103/PhysRevLett.120.046403
language
English
LU publication?
yes
id
dd23e56d-2580-46fd-b7df-292f250d7698
date added to LUP
2018-02-08 12:57:19
date last changed
2018-05-29 11:01:12
@article{dd23e56d-2580-46fd-b7df-292f250d7698,
  abstract     = {<p>We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.</p>},
  articleno    = {046403},
  author       = {Mazzola, F. and Wells, J. W. and Pakpour-Tabrizi, A. C. and Jackman, R. B. and Thiagarajan, B. and Hofmann, Ph and Miwa, J. A.},
  issn         = {0031-9007},
  language     = {eng},
  month        = {01},
  number       = {4},
  publisher    = {American Physical Society},
  series       = {Physical Review Letters},
  title        = {Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors},
  url          = {http://dx.doi.org/10.1103/PhysRevLett.120.046403},
  volume       = {120},
  year         = {2018},
}