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Sulfonated Dopant-Free Hole-Transport Material Promotes Interfacial Charge Transfer Dynamics for Highly Stable Perovskite Solar Cells

Li, Rui LU ; Liu, Maning LU orcid ; Matta, Sri Kasi ; Hiltunen, Arto ; Deng, Zhifeng ; Wang, Cheng ; Dai, Zhicheng ; Russo, Salvy P. ; Vivo, Paola and Zhang, Haichang (2021) In Advanced Sustainable Systems 5(12).
Abstract

The integration of a functional group into dopant-free hole-transport materials (HTMs) to modify the perovskite|HTM interface has become a promising strategy for high-performance and stable perovskite solar cells (PSCs). In this work, a sulfonated phenothiazine-based HTM is reported, namely TAS, which consists of a butterfly structure with a readily synthesized N,​N-​bis[4-​(methylthio)​phenyl]​aniline side functional group. The interaction between TAS and perovskite via Pb–S bond induces a dipole moment that deepens the valence band of perovskite and thereby leads to enhanced open-circuit voltage in corresponding n-i-p PSCs. More importantly, the functionalization of perovskite surface via Pb–S bond promotes the hole extraction... (More)

The integration of a functional group into dopant-free hole-transport materials (HTMs) to modify the perovskite|HTM interface has become a promising strategy for high-performance and stable perovskite solar cells (PSCs). In this work, a sulfonated phenothiazine-based HTM is reported, namely TAS, which consists of a butterfly structure with a readily synthesized N,​N-​bis[4-​(methylthio)​phenyl]​aniline side functional group. The interaction between TAS and perovskite via Pb–S bond induces a dipole moment that deepens the valence band of perovskite and thereby leads to enhanced open-circuit voltage in corresponding n-i-p PSCs. More importantly, the functionalization of perovskite surface via Pb–S bond promotes the hole extraction reaction while suppressing the interfacial non-radiative recombination, contributing to a 20–50% performance improvement compared to less- (4-​(methylthio)​-​N-​[4-​(methylthio)​phenyl]​aniline, DAS) or non-interacting (N,N-bis(4-methoxyphenyl)aniline, TAO) counterparts. Consequently, TAS-based PSCs exhibit superior device stability with a high PCE retention (>90% of the initial value) after 125 days of storage in the air.

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publishing date
type
Contribution to journal
publication status
published
subject
keywords
charge transfer dynamics, hole-transport material, interfacial modification, Pb–S bond, perovskite solar cells, stability
in
Advanced Sustainable Systems
volume
5
issue
12
article number
2100244
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85114675190
DOI
10.1002/adsu.202100244
language
English
LU publication?
no
id
e1bdbf4a-c27c-415b-83f9-9347678997e5
date added to LUP
2023-08-24 12:23:16
date last changed
2023-08-25 14:05:58
@article{e1bdbf4a-c27c-415b-83f9-9347678997e5,
  abstract     = {{<p>The integration of a functional group into dopant-free hole-transport materials (HTMs) to modify the perovskite|HTM interface has become a promising strategy for high-performance and stable perovskite solar cells (PSCs). In this work, a sulfonated phenothiazine-based HTM is reported, namely TAS, which consists of a butterfly structure with a readily synthesized N,​N-​bis[4-​(methylthio)​phenyl]​aniline side functional group. The interaction between TAS and perovskite via Pb–S bond induces a dipole moment that deepens the valence band of perovskite and thereby leads to enhanced open-circuit voltage in corresponding n-i-p PSCs. More importantly, the functionalization of perovskite surface via Pb–S bond promotes the hole extraction reaction while suppressing the interfacial non-radiative recombination, contributing to a 20–50% performance improvement compared to less- (4-​(methylthio)​-​N-​[4-​(methylthio)​phenyl]​aniline, DAS) or non-interacting (N,N-bis(4-methoxyphenyl)aniline, TAO) counterparts. Consequently, TAS-based PSCs exhibit superior device stability with a high PCE retention (&gt;90% of the initial value) after 125 days of storage in the air.</p>}},
  author       = {{Li, Rui and Liu, Maning and Matta, Sri Kasi and Hiltunen, Arto and Deng, Zhifeng and Wang, Cheng and Dai, Zhicheng and Russo, Salvy P. and Vivo, Paola and Zhang, Haichang}},
  keywords     = {{charge transfer dynamics; hole-transport material; interfacial modification; Pb–S bond; perovskite solar cells; stability}},
  language     = {{eng}},
  number       = {{12}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Advanced Sustainable Systems}},
  title        = {{Sulfonated Dopant-Free Hole-Transport Material Promotes Interfacial Charge Transfer Dynamics for Highly Stable Perovskite Solar Cells}},
  url          = {{http://dx.doi.org/10.1002/adsu.202100244}},
  doi          = {{10.1002/adsu.202100244}},
  volume       = {{5}},
  year         = {{2021}},
}