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Fabrication and characterization of AlP-GaP core-shell nanowires

Borgström, Magnus LU orcid ; Mergenthaler, Kilian LU ; Messing, Maria LU ; Håkanson, Ulf LU ; Wallentin, Jesper LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU (2011) In Journal of Crystal Growth 324(1). p.290-295
Abstract
We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanostructures, Crystal structure, Low press, Metalorganic vapor phase, epitaxy, Nanomaterials, Semiconducting aluminum compounds, Semiconducting III-V materials
in
Journal of Crystal Growth
volume
324
issue
1
pages
290 - 295
publisher
Elsevier
external identifiers
  • wos:000292362600051
  • scopus:79957838334
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2011.03.055
language
English
LU publication?
yes
id
e3b64474-886c-4e72-a2c2-ca47cd2bf6ca (old id 2029001)
date added to LUP
2016-04-01 13:34:00
date last changed
2025-10-14 12:15:45
@article{e3b64474-886c-4e72-a2c2-ca47cd2bf6ca,
  abstract     = {{We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.}},
  author       = {{Borgström, Magnus and Mergenthaler, Kilian and Messing, Maria and Håkanson, Ulf and Wallentin, Jesper and Samuelson, Lars and Pistol, Mats-Erik}},
  issn         = {{0022-0248}},
  keywords     = {{Nanostructures; Crystal structure; Low press; Metalorganic vapor phase; epitaxy; Nanomaterials; Semiconducting aluminum compounds; Semiconducting III-V materials}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{290--295}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Crystal Growth}},
  title        = {{Fabrication and characterization of AlP-GaP core-shell nanowires}},
  url          = {{http://dx.doi.org/10.1016/j.jcrysgro.2011.03.055}},
  doi          = {{10.1016/j.jcrysgro.2011.03.055}},
  volume       = {{324}},
  year         = {{2011}},
}