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INVITED TALK for sub-area “Emissive, Micro‐LED, and Quantum‐Dot Display” : On the strive towards all-InGaN sub-2µm sized RGB microLEDs

Samuelson, Lars LU (2024) International Symposium, Seminar, and Exhibition, Display Week 2024 55. p.708-708
Abstract

III-Nitride based LEDs based on InGaN active layers on GaN work very well for the blue and green emitting LEDs. However, the large lattice mis-match between redemitting active layers, with at least 35% indium in the active layers, and the GaN substrate still limits the efficiencies obtained to very low values. Unfortunately, the approach to use GaAs based (GaAs/AlInGaP) devices for the red fails for LEDs much smaller than 20μm, while AR-applications require pixel sizes down to, or even below, 2μm. After a review of the status of different approaches published towards all-nitride technologies, I will focus on our concept of realizing relaxed templates of InGaN on top of which we form sub-µm sized nanoLEDs.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
SID Symposium Digest of Technical Papers
volume
55
pages
1 pages
conference name
International Symposium, Seminar, and Exhibition, Display Week 2024
conference location
San Jose, United States
conference dates
2024-05-12 - 2024-05-17
external identifiers
  • scopus:85202593929
DOI
10.1002/sdtp.17623
language
English
LU publication?
yes
id
e6d68309-7f01-42c5-9ada-bbbedcdbd7d4
date added to LUP
2025-01-16 11:03:19
date last changed
2025-10-14 11:51:20
@inproceedings{e6d68309-7f01-42c5-9ada-bbbedcdbd7d4,
  abstract     = {{<p>III-Nitride based LEDs based on InGaN active layers on GaN work very well for the blue and green emitting LEDs. However, the large lattice mis-match between redemitting active layers, with at least 35% indium in the active layers, and the GaN substrate still limits the efficiencies obtained to very low values. Unfortunately, the approach to use GaAs based (GaAs/AlInGaP) devices for the red fails for LEDs much smaller than 20μm, while AR-applications require pixel sizes down to, or even below, 2μm. After a review of the status of different approaches published towards all-nitride technologies, I will focus on our concept of realizing relaxed templates of InGaN on top of which we form sub-µm sized nanoLEDs.</p>}},
  author       = {{Samuelson, Lars}},
  booktitle    = {{SID Symposium Digest of Technical Papers}},
  language     = {{eng}},
  pages        = {{708--708}},
  title        = {{INVITED TALK for sub-area “Emissive, Micro‐LED, and Quantum‐Dot Display” : On the strive towards all-InGaN sub-2µm sized RGB microLEDs}},
  url          = {{http://dx.doi.org/10.1002/sdtp.17623}},
  doi          = {{10.1002/sdtp.17623}},
  volume       = {{55}},
  year         = {{2024}},
}