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Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Schukfeh, Muhammed Ihab; Hansen, Allan; Tornow, Marc; Storm, Kristian LU ; Thelander, Kimberly Dick LU ; Thelander, Claes LU ; Samuelson, Lars LU ; Hinze, Peter; Weimann, Thomas and Wanderka, Nelia (2016) 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 In IEEE-NANO 2015 - 15th International Conference on Nanotechnology p.1489-1492
Abstract

We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
heterostructure nanowire, InAs/InP, nanogap electrodes, selective etching
in
IEEE-NANO 2015 - 15th International Conference on Nanotechnology
pages
4 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
external identifiers
  • scopus:84964389237
DOI
10.1109/NANO.2015.7388924
language
English
LU publication?
yes
id
e7b098cd-bf75-4d45-9e54-f3138d0c60d9
date added to LUP
2016-10-05 10:30:35
date last changed
2017-01-01 08:36:00
@inproceedings{e7b098cd-bf75-4d45-9e54-f3138d0c60d9,
  abstract     = {<p>We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.</p>},
  author       = {Schukfeh, Muhammed Ihab and Hansen, Allan and Tornow, Marc and Storm, Kristian and Thelander, Kimberly Dick and Thelander, Claes and Samuelson, Lars and Hinze, Peter and Weimann, Thomas and Wanderka, Nelia},
  booktitle    = {IEEE-NANO 2015 - 15th International Conference on Nanotechnology},
  keyword      = {heterostructure nanowire,InAs/InP,nanogap electrodes,selective etching},
  language     = {eng},
  month        = {01},
  pages        = {1489--1492},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps},
  url          = {http://dx.doi.org/10.1109/NANO.2015.7388924},
  year         = {2016},
}