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Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

Zhang, J.; Alessandri, C.; Fay, P.; Seabaugh, A.; Ytterdal, T.; Memisevic, E. LU and Wernersson, L. E. LU (2018) 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 In 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 2018-March. p.1-2
Abstract

Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an... (More)

Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an order of magnitude.

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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
compact model, millimeter-wave detector, SPICE, TFET, tunnel FET
in
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
volume
2018-March
pages
2 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
external identifiers
  • scopus:85047644631
ISBN
9781538637654
DOI
10.1109/S3S.2017.8309216
language
English
LU publication?
yes
id
e7e62bf6-42d5-4b42-8b73-de3f02117c94
date added to LUP
2018-06-14 14:46:38
date last changed
2018-06-14 14:46:38
@inproceedings{e7e62bf6-42d5-4b42-8b73-de3f02117c94,
  abstract     = {<p>Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I<sub>60</sub> of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (V<sub>GS</sub> =-0.06 V, V<sub>DS</sub> = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In<sub>0</sub>.<sub>53</sub>Ga<sub>0</sub>.<sub>47</sub>As/GaAs<sub>0</sub>.<sub>5</sub>Sb<sub>0</sub>.<sub>5</sub> heterojunction TFET by over an order of magnitude.</p>},
  author       = {Zhang, J. and Alessandri, C. and Fay, P. and Seabaugh, A. and Ytterdal, T. and Memisevic, E. and Wernersson, L. E.},
  booktitle    = {2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017},
  isbn         = {9781538637654},
  keyword      = {compact model,millimeter-wave detector,SPICE,TFET,tunnel FET},
  language     = {eng},
  month        = {03},
  pages        = {1--2},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector},
  url          = {http://dx.doi.org/10.1109/S3S.2017.8309216},
  volume       = {2018-March},
  year         = {2018},
}