Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
(2018) 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 2018-March. p.1-2- Abstract
Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an... (More)
Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an order of magnitude.
(Less)
- author
- Zhang, J. ; Alessandri, C. ; Fay, P. ; Seabaugh, A. ; Ytterdal, T. ; Memisevic, E. LU and Wernersson, L. E. LU
- organization
- publishing date
- 2018-03-07
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- compact model, millimeter-wave detector, SPICE, TFET, tunnel FET
- host publication
- 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
- volume
- 2018-March
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
- conference location
- Burlingame, United States
- conference dates
- 2017-10-16 - 2017-10-18
- external identifiers
-
- scopus:85047644631
- ISBN
- 9781538637654
- DOI
- 10.1109/S3S.2017.8309216
- language
- English
- LU publication?
- yes
- id
- e7e62bf6-42d5-4b42-8b73-de3f02117c94
- date added to LUP
- 2018-06-14 14:46:38
- date last changed
- 2022-01-31 04:01:20
@inproceedings{e7e62bf6-42d5-4b42-8b73-de3f02117c94,
abstract = {{<p>Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I<sub>60</sub> of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (V<sub>GS</sub> =-0.06 V, V<sub>DS</sub> = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In<sub>0</sub>.<sub>53</sub>Ga<sub>0</sub>.<sub>47</sub>As/GaAs<sub>0</sub>.<sub>5</sub>Sb<sub>0</sub>.<sub>5</sub> heterojunction TFET by over an order of magnitude.</p>}},
author = {{Zhang, J. and Alessandri, C. and Fay, P. and Seabaugh, A. and Ytterdal, T. and Memisevic, E. and Wernersson, L. E.}},
booktitle = {{2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017}},
isbn = {{9781538637654}},
keywords = {{compact model; millimeter-wave detector; SPICE; TFET; tunnel FET}},
language = {{eng}},
month = {{03}},
pages = {{1--2}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector}},
url = {{http://dx.doi.org/10.1109/S3S.2017.8309216}},
doi = {{10.1109/S3S.2017.8309216}},
volume = {{2018-March}},
year = {{2018}},
}