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Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Lind, Erik LU ; Niquet, Yann-Michel ; Mera, Hector and Wernersson, Lars-Erik LU (2010) In Applied Physics Letters 96(23).
Abstract
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010... (More)
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559] (Less)
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; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
96
issue
23
article number
233507
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000278695900081
  • scopus:77953501984
ISSN
0003-6951
DOI
10.1063/1.3449559
language
English
LU publication?
yes
id
e851e659-e453-419e-a2f0-fc707b9cb153 (old id 1631591)
date added to LUP
2016-04-01 10:20:45
date last changed
2023-08-31 00:25:30
@article{e851e659-e453-419e-a2f0-fc707b9cb153,
  abstract     = {{We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]}},
  author       = {{Lind, Erik and Niquet, Yann-Michel and Mera, Hector and Wernersson, Lars-Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{23}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors}},
  url          = {{http://dx.doi.org/10.1063/1.3449559}},
  doi          = {{10.1063/1.3449559}},
  volume       = {{96}},
  year         = {{2010}},
}