Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.

Berg, Martin LU ; Persson, Karl-Magnus LU ; Wu, Jun LU ; Lind, Erik LU orcid ; Sjöland, Henrik LU orcid and Wernersson, Lars-Erik LU (2014) In Nanotechnology 25(48).
Abstract
Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
25
issue
48
article number
485203
publisher
IOP Publishing
external identifiers
  • pmid:25382271
  • wos:000345286400008
  • scopus:84911072527
  • pmid:25382271
ISSN
0957-4484
DOI
10.1088/0957-4484/25/48/485203
language
English
LU publication?
yes
id
ebc70878-aff2-4504-8d89-5ee777ae1b4a (old id 4817084)
date added to LUP
2016-04-01 10:35:02
date last changed
2025-10-14 09:30:39
@article{ebc70878-aff2-4504-8d89-5ee777ae1b4a,
  abstract     = {{Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.}},
  author       = {{Berg, Martin and Persson, Karl-Magnus and Wu, Jun and Lind, Erik and Sjöland, Henrik and Wernersson, Lars-Erik}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{48}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/25/48/485203}},
  doi          = {{10.1088/0957-4484/25/48/485203}},
  volume       = {{25}},
  year         = {{2014}},
}