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X-ray scattering and diffraction from ion beam induced ripples in crystalline silicon

Biermanns, Andreas ; Pietsch, Ullrich ; Grenzer, Jörg ; Hanisch, Antje ; Facsko, Stefan ; Carbone, Geradina LU and Metzger, Till Hartmut (2008) In Journal of Applied Physics 104(4).
Abstract

We report on periodic ripple formation on Si(001) surfaces after bombardment with Xe+ ions with energies between 5 and 35 keV under incidence angles of 65° and 70°. The sputter process leads to the formation of a rippled amorphous surface layer, followed by a rippled interface toward crystalline material. Using grazing-incidence small-angle scattering and diffraction, we show that the surface morphology is exactly reproduced at the interface. In addition, we observe that the crystal lattice close to the interface is anisotropically expanded. The lattice expansion parallel to the ripples is larger than those perpendicular to them.

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author
; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
in
Journal of Applied Physics
volume
104
issue
4
article number
044312
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:50849104772
ISSN
0021-8979
DOI
10.1063/1.2973037
language
English
LU publication?
no
id
eef7a157-6f60-47a6-8329-4e156f296fae
date added to LUP
2021-12-15 11:56:34
date last changed
2022-02-09 18:56:26
@article{eef7a157-6f60-47a6-8329-4e156f296fae,
  abstract     = {{<p>We report on periodic ripple formation on Si(001) surfaces after bombardment with Xe<sup>+</sup> ions with energies between 5 and 35 keV under incidence angles of 65° and 70°. The sputter process leads to the formation of a rippled amorphous surface layer, followed by a rippled interface toward crystalline material. Using grazing-incidence small-angle scattering and diffraction, we show that the surface morphology is exactly reproduced at the interface. In addition, we observe that the crystal lattice close to the interface is anisotropically expanded. The lattice expansion parallel to the ripples is larger than those perpendicular to them.</p>}},
  author       = {{Biermanns, Andreas and Pietsch, Ullrich and Grenzer, Jörg and Hanisch, Antje and Facsko, Stefan and Carbone, Geradina and Metzger, Till Hartmut}},
  issn         = {{0021-8979}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Applied Physics}},
  title        = {{X-ray scattering and diffraction from ion beam induced ripples in crystalline silicon}},
  url          = {{http://dx.doi.org/10.1063/1.2973037}},
  doi          = {{10.1063/1.2973037}},
  volume       = {{104}},
  year         = {{2008}},
}