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Graphene Ribbon Growth on Structured Silicon Carbide

Stöhr, Alexander; Baringhaus, Jens; Aprojanz, Johannes; Link, Stefan; Tegenkamp, Christoph; Niu, Yuran LU ; Zakharov, Alexei A. LU ; Chen, Chaoyu; Avila, José and Asensio, Maria C., et al. (2017) In Annalen der Physik 529(11).
Abstract

Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The... (More)

Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).

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type
Contribution to journal
publication status
published
subject
keywords
AFM, ARPES, Epitaxial graphene, Facets, LEEM, Nanoribbons, Side walls, Silicon carbide
in
Annalen der Physik
volume
529
issue
11
publisher
John Wiley & Sons
external identifiers
  • scopus:85034111922
  • wos:000414808800017
ISSN
0003-3804
DOI
10.1002/andp.201700052
language
English
LU publication?
yes
id
f49753a1-9244-4ea8-8db9-25edac27d22b
date added to LUP
2017-12-08 10:21:37
date last changed
2018-01-16 13:27:20
@article{f49753a1-9244-4ea8-8db9-25edac27d22b,
  abstract     = {<p>Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).</p>},
  articleno    = {1700052},
  author       = {Stöhr, Alexander and Baringhaus, Jens and Aprojanz, Johannes and Link, Stefan and Tegenkamp, Christoph and Niu, Yuran and Zakharov, Alexei A. and Chen, Chaoyu and Avila, José and Asensio, Maria C. and Starke, Ulrich},
  issn         = {0003-3804},
  keyword      = {AFM,ARPES,Epitaxial graphene,Facets,LEEM,Nanoribbons,Side walls,Silicon carbide},
  language     = {eng},
  month        = {11},
  number       = {11},
  publisher    = {John Wiley & Sons},
  series       = {Annalen der Physik},
  title        = {Graphene Ribbon Growth on Structured Silicon Carbide},
  url          = {http://dx.doi.org/10.1002/andp.201700052},
  volume       = {529},
  year         = {2017},
}