Persistence of Charge Ordering Instability to Coulomb Engineering in the Excitonic Insulator Candidate TiSe2
(2025) In Physical Review X 15(4).- Abstract
TiSe2 has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically be expected, while a lack of "smoking-gun"signatures for the importance of the electron-hole interaction in driving the phase transition has rendered it challenging to distinguish the EI from the conventional charge-density wave (CDW) phase. Here, we demonstrate a new approach, exploiting the susceptibility of excitons to dielectric screening. We combine mechanical exfoliation with molecular-beam epitaxy to fabricate ultraclean van der Waals heterostructures of monolayer (ML) TiSe2/graphite and ML TiSe2/h-BN. We observe how the modified substrate screening... (More)
TiSe2 has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically be expected, while a lack of "smoking-gun"signatures for the importance of the electron-hole interaction in driving the phase transition has rendered it challenging to distinguish the EI from the conventional charge-density wave (CDW) phase. Here, we demonstrate a new approach, exploiting the susceptibility of excitons to dielectric screening. We combine mechanical exfoliation with molecular-beam epitaxy to fabricate ultraclean van der Waals heterostructures of monolayer (ML) TiSe2/graphite and ML TiSe2/h-BN. We observe how the modified substrate screening environment drives a renormalization of the quasiparticle band gap of the TiSe2 layer, signifying its susceptibility to Coulomb engineering. The temperature-dependent evolution of its electronic structure, however, remains unaffected, indicating that excitons are not required to drive the CDW transition in TiSe2.
(Less)
- author
- organization
- publishing date
- 2025-10
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review X
- volume
- 15
- issue
- 4
- article number
- 041028
- publisher
- American Physical Society
- external identifiers
-
- scopus:105022635456
- ISSN
- 2160-3308
- DOI
- 10.1103/9trc-9865
- language
- English
- LU publication?
- yes
- id
- f641543a-e491-4b8c-898f-5dd18feca3b6
- date added to LUP
- 2026-02-02 11:53:26
- date last changed
- 2026-02-02 11:54:34
@article{f641543a-e491-4b8c-898f-5dd18feca3b6,
abstract = {{<p>TiSe2 has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically be expected, while a lack of "smoking-gun"signatures for the importance of the electron-hole interaction in driving the phase transition has rendered it challenging to distinguish the EI from the conventional charge-density wave (CDW) phase. Here, we demonstrate a new approach, exploiting the susceptibility of excitons to dielectric screening. We combine mechanical exfoliation with molecular-beam epitaxy to fabricate ultraclean van der Waals heterostructures of monolayer (ML) TiSe2/graphite and ML TiSe2/h-BN. We observe how the modified substrate screening environment drives a renormalization of the quasiparticle band gap of the TiSe2 layer, signifying its susceptibility to Coulomb engineering. The temperature-dependent evolution of its electronic structure, however, remains unaffected, indicating that excitons are not required to drive the CDW transition in TiSe2.</p>}},
author = {{Buchberger, Sebastian and T'Veld, Yann In and Rajan, Akhil and Murgatroyd, Philip A.E. and Edwards, Brendan and Saika, Bruno K. and Kushwaha, Naina and Visscher, Maria H. and Berges, Jan and Carbone, Dina and Osiecki, Jacek and Polley, Craig and Wehling, Tim and King, Phil D.C.}},
issn = {{2160-3308}},
language = {{eng}},
number = {{4}},
publisher = {{American Physical Society}},
series = {{Physical Review X}},
title = {{Persistence of Charge Ordering Instability to Coulomb Engineering in the Excitonic Insulator Candidate TiSe2}},
url = {{http://dx.doi.org/10.1103/9trc-9865}},
doi = {{10.1103/9trc-9865}},
volume = {{15}},
year = {{2025}},
}