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Size-effects in indium gallium arsenide nanowire field-effect transistors

Zota, Cezar B. LU and Lind, E. LU (2016) In Applied Physics Letters 109(6).
Abstract

We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
109
issue
6
publisher
American Institute of Physics
external identifiers
  • scopus:84982252649
  • wos:000383183600054
ISSN
0003-6951
DOI
10.1063/1.4961109
language
English
LU publication?
yes
id
fb8d3849-6355-485f-801f-720dbb04a1e7
date added to LUP
2016-12-07 13:37:25
date last changed
2017-01-01 08:42:22
@article{fb8d3849-6355-485f-801f-720dbb04a1e7,
  abstract     = {<p>We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V<sub>T</sub> variability, and on-current, through the mean free path, in the choice of the channel material.</p>},
  articleno    = {063505},
  author       = {Zota, Cezar B. and Lind, E.},
  issn         = {0003-6951},
  language     = {eng},
  month        = {08},
  number       = {6},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Size-effects in indium gallium arsenide nanowire field-effect transistors},
  url          = {http://dx.doi.org/10.1063/1.4961109},
  volume       = {109},
  year         = {2016},
}