Size-effects in indium gallium arsenide nanowire field-effect transistors
(2016) In Applied Physics Letters 109(6).- Abstract
We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/fb8d3849-6355-485f-801f-720dbb04a1e7
- author
- Zota, Cezar B. LU and Lind, E. LU
- organization
- publishing date
- 2016-08-08
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 109
- issue
- 6
- article number
- 063505
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000383183600054
- scopus:84982252649
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4961109
- language
- English
- LU publication?
- yes
- id
- fb8d3849-6355-485f-801f-720dbb04a1e7
- date added to LUP
- 2016-12-07 13:37:25
- date last changed
- 2024-08-15 02:51:40
@article{fb8d3849-6355-485f-801f-720dbb04a1e7, abstract = {{<p>We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V<sub>T</sub> variability, and on-current, through the mean free path, in the choice of the channel material.</p>}}, author = {{Zota, Cezar B. and Lind, E.}}, issn = {{0003-6951}}, language = {{eng}}, month = {{08}}, number = {{6}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Size-effects in indium gallium arsenide nanowire field-effect transistors}}, url = {{http://dx.doi.org/10.1063/1.4961109}}, doi = {{10.1063/1.4961109}}, volume = {{109}}, year = {{2016}}, }