Domain-wall controlled (Ga,Mn)As nanostructures for spintronic applications
(2013) In Physica E: Low-Dimensional Systems and Nanostructures 51. p.128-134- Abstract
- Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed. Next, magneto-resistive, cross-like nanostructures fabricated by electron-beam lithography patterning and chemical etching from thin (Ga,Mn)As epitaxial layers are described. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, which make use of the patterning-induced magnetic anisotropy, a novel magneto-resistive memory effect related to a rearrangement of magnetic domain walls in the central part of the... (More)
- Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed. Next, magneto-resistive, cross-like nanostructures fabricated by electron-beam lithography patterning and chemical etching from thin (Ga,Mn)As epitaxial layers are described. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, which make use of the patterning-induced magnetic anisotropy, a novel magneto-resistive memory effect related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. The effect consists in that the zerb-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells. (C) 2012 Elsevier B.V. All rights reserved. (Less)
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https://lup.lub.lu.se/record/3927211
- author
- Wosinski, Tadeusz ; Andrearczyk, Tomasz ; Figielski, Tadeusz ; Wrobel, Jerzy and Sadowski, Janusz LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physica E: Low-Dimensional Systems and Nanostructures
- volume
- 51
- pages
- 128 - 134
- publisher
- Elsevier
- external identifiers
-
- wos:000320145400023
- scopus:84892515579
- ISSN
- 1386-9477
- DOI
- 10.1016/j.physe.2012.12.006
- language
- English
- LU publication?
- yes
- id
- ffb383e3-3a70-4f14-b4d1-072e09156264 (old id 3927211)
- date added to LUP
- 2016-04-01 14:44:22
- date last changed
- 2022-02-27 04:19:01
@article{ffb383e3-3a70-4f14-b4d1-072e09156264,
abstract = {{Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed. Next, magneto-resistive, cross-like nanostructures fabricated by electron-beam lithography patterning and chemical etching from thin (Ga,Mn)As epitaxial layers are described. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, which make use of the patterning-induced magnetic anisotropy, a novel magneto-resistive memory effect related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. The effect consists in that the zerb-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells. (C) 2012 Elsevier B.V. All rights reserved.}},
author = {{Wosinski, Tadeusz and Andrearczyk, Tomasz and Figielski, Tadeusz and Wrobel, Jerzy and Sadowski, Janusz}},
issn = {{1386-9477}},
language = {{eng}},
pages = {{128--134}},
publisher = {{Elsevier}},
series = {{Physica E: Low-Dimensional Systems and Nanostructures}},
title = {{Domain-wall controlled (Ga,Mn)As nanostructures for spintronic applications}},
url = {{http://dx.doi.org/10.1016/j.physe.2012.12.006}},
doi = {{10.1016/j.physe.2012.12.006}},
volume = {{51}},
year = {{2013}},
}