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- 2015
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Mark
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
(
- Contribution to journal › Article
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Mark
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
2015) 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 p.61-64(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding