11 – 18 of 18
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- « previous
- 1
- 2
- next »
- 2014
-
Mark
Selectively grown III-N μ-substrates for defect reduction and lattice matching
2014) 17th International Conference on Metalorganic Vapor Phase Epitaxy, 2014(
- Contribution to conference › Abstract
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
-
Mark
A luminescence study of doping effects in InP-based radial nanowire structures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Spatially resolved Hall effect measurements in core-shell InP nanowires
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
Spatially resolved Hall effect measurement in a single semiconductor nanowire
(
- Contribution to journal › Article
-
Mark
A novel platform enabling spatially resolved electro-optical mapping of NW facets
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
(
- Contribution to journal › Article
-
Mark
Nucleation and initial stages of growth of GaN nanowires for LEDs by selective-area MOVPE
2011) 9th Int. Conf. on Nitride Semiconductors(
- Contribution to conference › Paper, not in proceeding
- « previous
- 1
- 2
- next »