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- 2010
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Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
- 2008
-
Mark
Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
(
- Contribution to journal › Article
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