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- 2012
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Mark
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
(
- Contribution to journal › Article
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Mark
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
2012) In ACS Nano(
- Contribution to journal › Article
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
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Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
(
- Contribution to journal › Article
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Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(
- Contribution to journal › Article
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Mark
Obligatoriskt nanoregister? Nej tack!
2012) In Ny teknik(
- Contribution to specialist publication or newspaper › Newspaper article
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Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
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Mark
Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
Polytypic InAs Nanowire Studies Using Scanning Tunneling Microscopy
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
A novel platform enabling spatially resolved electro-optical mapping of NW facets
2012) ICPS 2012(
- Contribution to conference › Abstract