Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures

Jacobsson, Daniel LU orcid ; Persson, J. M. ; Kriegner, D. ; Etzelstorfer, T. ; Wallentin, Jesper LU ; Wagner, Jakob LU ; Stangl, J. ; Samuelson, Lars LU ; Deppert, Knut LU orcid and Borgström, Magnus LU orcid (2012) In Nanotechnology 23(24).
Abstract
Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in... (More)
Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
23
issue
24
article number
245601
publisher
IOP Publishing
external identifiers
  • wos:000305160500006
  • scopus:84861610127
ISSN
0957-4484
DOI
10.1088/0957-4484/23/24/245601
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
4238f625-f6e8-45c4-a036-09cb87decb5b (old id 2891151)
date added to LUP
2016-04-01 10:56:53
date last changed
2025-10-14 10:41:09
@article{4238f625-f6e8-45c4-a036-09cb87decb5b,
  abstract     = {{Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.}},
  author       = {{Jacobsson, Daniel and Persson, J. M. and Kriegner, D. and Etzelstorfer, T. and Wallentin, Jesper and Wagner, Jakob and Stangl, J. and Samuelson, Lars and Deppert, Knut and Borgström, Magnus}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{24}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/23/24/245601}},
  doi          = {{10.1088/0957-4484/23/24/245601}},
  volume       = {{23}},
  year         = {{2012}},
}