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- 2011
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
(2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
