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2005
Mark Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
Markevich, VP ; Murin, LI ; Lastovskii, SB ; Medvedeva, IF ; Lindström, Lennart ^LU ; Peaker, AR ; Coutinho, J ; Jones, R ; Torres, VJB and Oberg, S , et al. (2005) In Solid State Phenomena 108-109. p.273-278
- Contribution to journal › Article
Mark Calibration factor for determination of interstitial oxygen concentration in germanium by infrared absorption
Litvinov, V V ; Svensson, B G ; Murin, L I ; Lindström, Lennart ^LU and Markevich, V P (2005) In Solid State Phenomena 108-109. p.735-740
- Contribution to journal › Article
Mark Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
Khirunenko, L ; Pomozov, Y ; Tripachko, N ; Sosnin, M ; Duvanskii, A ; Murin, LI ; Lindström, Lennart ^LU ; Lastovskii, SB ; Makarenko, LF and Markevich, VP , et al. (2005) In Solid State Phenomena 108-109. p.261-266
- Contribution to journal › Article