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- 2009
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Mark
Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2006
-
Mark
Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies
2006) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 253(1-2). p.210-213(
- Contribution to journal › Article
- 2005
-
Mark
VOn (n >= 3) defects in irradiated and heat-treated silicon
(
- Contribution to journal › Article
-
Mark
Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
(
- Contribution to journal › Article
-
Mark
Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
(
- Contribution to journal › Article
-
Mark
Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
(
- Contribution to journal › Article
- 2003
-
Mark
Spectroscopic observation of the TDD0 in silicon
(
- Contribution to journal › Article
-
Mark
Interaction between localized and extended modes of oxygen in silicon
(
- Contribution to journal › Article
-
Mark
Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies
(
- Contribution to journal › Article
-
Mark
Stable hydrogen pair trapped at carbon impurities in silicon
(
- Contribution to journal › Article