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- 2011
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Mark
Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
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- Contribution to journal › Article
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Mark
Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
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- Contribution to journal › Article
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Mark
Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
(
- Contribution to journal › Article
- 2010
-
Mark
Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model
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- Contribution to journal › Article
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Mark
Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
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- Contribution to journal › Article
- 2008
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Mark
Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
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- Contribution to journal › Article
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Mark
Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
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- Contribution to journal › Article
- 2007
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Mark
A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy
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- Contribution to journal › Article
- 2005
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Mark
Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy
(
- Contribution to journal › Article