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- 2022
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Mark
A new user-friendly materials science end station at the FinEstBeAMS beamline of MAX IV
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
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Mark
Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations
(
- Contribution to journal › Article
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Mark
FinEstBeaMS – A wide-range Finnish-Estonian Beamline for Materials Science at the 1.5 GeV storage ring at the MAX IV Laboratory
2017) In Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 859. p.83-89(
- Contribution to journal › Article
- 2015
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Mark
Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
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- Contribution to journal › Article
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Mark
Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
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- Contribution to journal › Article
- 2014
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Mark
Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
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- Contribution to journal › Article
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Mark
Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 x 2)-O
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- Contribution to journal › Article
- 2013
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Mark
Photoemission and density functional theory study of Ge(100): Clean surface and Yb-induced (2x4) reconstruction
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- Contribution to journal › Article
- 2012
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Mark
Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory
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- Contribution to journal › Article
- 2011
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Mark
Dimer-T(3) reconstruction of the Sm/Si(100)(2 x 3) surface studied by high-resolution photoelectron spectroscopy and density functional theory calculations
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- Contribution to journal › Article
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Mark
Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
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- Contribution to journal › Article
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Mark
Surface core-level shifts on Ge(111)c(2 x 8): Experiment and theory
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- Contribution to journal › Article
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Mark
Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
(
- Contribution to journal › Article
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Mark
Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
(
- Contribution to journal › Article
- 2010
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Mark
Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model
(
- Contribution to journal › Article
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Mark
Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
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- Contribution to journal › Article
- 2008
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Mark
Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
(
- Contribution to journal › Article
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Mark
Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
(
- Contribution to journal › Article