Improved breakdown voltages for type I InP/InGaAs DHBTs
(2008) 20th International Conference on Indium Phosphide and Related Materials p.504-507- Abstract
- We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1463541
- author
- Lind, Erik LU ; Griffith, Zach and Rodwell, Mark J. W.
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- InP heterojunction bipolar transistor
- host publication
- 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
- pages
- 504 - 507
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 20th International Conference on Indium Phosphide and Related Materials
- conference location
- Versailles, France
- conference dates
- 2008-05-25 - 2008-05-29
- external identifiers
-
- wos:000267695700142
- scopus:70149100468
- ISSN
- 1092-8669
- DOI
- 10.1109/ICIPRM.2008.4703033
- language
- English
- LU publication?
- yes
- id
- e92fc757-61a4-4bee-a57c-de189afc671d (old id 1463541)
- date added to LUP
- 2016-04-01 13:54:25
- date last changed
- 2024-01-24 18:24:38
@inproceedings{e92fc757-61a4-4bee-a57c-de189afc671d, abstract = {{We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.}}, author = {{Lind, Erik and Griffith, Zach and Rodwell, Mark J. W.}}, booktitle = {{20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008}}, issn = {{1092-8669}}, keywords = {{InP heterojunction bipolar transistor}}, language = {{eng}}, pages = {{504--507}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Improved breakdown voltages for type I InP/InGaAs DHBTs}}, url = {{http://dx.doi.org/10.1109/ICIPRM.2008.4703033}}, doi = {{10.1109/ICIPRM.2008.4703033}}, year = {{2008}}, }