InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(2011) In IEEE Journal of Selected Topics in Quantum Electronics 17(4). p.907-914- Abstract
- The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single-and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO2 layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired... (More)
- The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single-and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO2 layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired transistor characteristics. The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires. For InSb nanowire quantum dots, both contact-induced Schottky-barrier-defined devices and top-finger-gate-defined devices are fabricated, and the Si substrate is used as a gate to tune the electron number in the quantum dots. The electrical measurements of these fabricated quantum-dot devices show the Coulomb-blockade effect at 4.2 K. A Fabry-Perot-like interference effect is also observed in a Schottky-barrier-defined quantum device. The authors also discuss in a comparative way, the results of measurements for the InSb nanowire devices made by different fabrication technologies employed in this study. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2162959
- author
- Nilsson, Henrik LU ; Deng, Mingtang LU ; Caroff, Philippe LU ; Thelander, Claes LU ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU and Xu, Hongqi LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Field-effect transistors (FETs), indium compounds, quantum dots, semiconductor growth, single-electron transistors
- in
- IEEE Journal of Selected Topics in Quantum Electronics
- volume
- 17
- issue
- 4
- pages
- 907 - 914
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000293755500016
- scopus:80051694798
- ISSN
- 1077-260X
- DOI
- 10.1109/JSTQE.2010.2090135
- language
- English
- LU publication?
- yes
- id
- 1a17fe90-cd87-4c2a-a7f2-1edb1bfb5058 (old id 2162959)
- date added to LUP
- 2016-04-01 13:08:15
- date last changed
- 2023-11-12 12:40:31
@article{1a17fe90-cd87-4c2a-a7f2-1edb1bfb5058,
abstract = {{The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single-and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO2 layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired transistor characteristics. The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires. For InSb nanowire quantum dots, both contact-induced Schottky-barrier-defined devices and top-finger-gate-defined devices are fabricated, and the Si substrate is used as a gate to tune the electron number in the quantum dots. The electrical measurements of these fabricated quantum-dot devices show the Coulomb-blockade effect at 4.2 K. A Fabry-Perot-like interference effect is also observed in a Schottky-barrier-defined quantum device. The authors also discuss in a comparative way, the results of measurements for the InSb nanowire devices made by different fabrication technologies employed in this study.}},
author = {{Nilsson, Henrik and Deng, Mingtang and Caroff, Philippe and Thelander, Claes and Samuelson, Lars and Wernersson, Lars-Erik and Xu, Hongqi}},
issn = {{1077-260X}},
keywords = {{Field-effect transistors (FETs); indium compounds; quantum dots; semiconductor growth; single-electron transistors}},
language = {{eng}},
number = {{4}},
pages = {{907--914}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Journal of Selected Topics in Quantum Electronics}},
title = {{InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices}},
url = {{http://dx.doi.org/10.1109/JSTQE.2010.2090135}},
doi = {{10.1109/JSTQE.2010.2090135}},
volume = {{17}},
year = {{2011}},
}