Electronic structure of [100]-oriented free-standing semiconductor nanowires
(2004) In Nano Letters 4(12). p.2409-2414- Abstract
- We report on a theoretical study of the electronic structure of [100]-oriented free-standing III-V semiconductor nanowires with quadratic (square wire) and rectangular (nanobelt) cross-sections based on an atomistic tight-binding approach. It is shown that at the same cross-section aspect ratio, the characteristics of the band structure and state wave functions of the nanowires in the vicinity of the band edges are insensitive to variation of the lateral size, although the band energies show a strong dependence on the lateral size. It is also shown that the effective mass of the conduction bands of the nanowires is systematically enhanced with decrease of the nanowire size, and k(.)p analysis generally overestimates the effective mass... (More)
- We report on a theoretical study of the electronic structure of [100]-oriented free-standing III-V semiconductor nanowires with quadratic (square wire) and rectangular (nanobelt) cross-sections based on an atomistic tight-binding approach. It is shown that at the same cross-section aspect ratio, the characteristics of the band structure and state wave functions of the nanowires in the vicinity of the band edges are insensitive to variation of the lateral size, although the band energies show a strong dependence on the lateral size. It is also shown that the effective mass of the conduction bands of the nanowires is systematically enhanced with decrease of the nanowire size, and k(.)p analysis generally overestimates the effective mass enhancement. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/259160
- author
- Persson, Martin LU and Xu, Hongqi LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 4
- issue
- 12
- pages
- 2409 - 2414
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000225681300019
- scopus:10844254090
- ISSN
- 1530-6992
- DOI
- 10.1021/nl0485049
- language
- English
- LU publication?
- yes
- id
- e49dc7e9-a7b0-4e9e-a253-e9bc20527ec0 (old id 259160)
- date added to LUP
- 2016-04-01 17:14:46
- date last changed
- 2022-01-29 01:22:35
@article{e49dc7e9-a7b0-4e9e-a253-e9bc20527ec0,
abstract = {{We report on a theoretical study of the electronic structure of [100]-oriented free-standing III-V semiconductor nanowires with quadratic (square wire) and rectangular (nanobelt) cross-sections based on an atomistic tight-binding approach. It is shown that at the same cross-section aspect ratio, the characteristics of the band structure and state wave functions of the nanowires in the vicinity of the band edges are insensitive to variation of the lateral size, although the band energies show a strong dependence on the lateral size. It is also shown that the effective mass of the conduction bands of the nanowires is systematically enhanced with decrease of the nanowire size, and k(.)p analysis generally overestimates the effective mass enhancement.}},
author = {{Persson, Martin and Xu, Hongqi}},
issn = {{1530-6992}},
language = {{eng}},
number = {{12}},
pages = {{2409--2414}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Electronic structure of [100]-oriented free-standing semiconductor nanowires}},
url = {{http://dx.doi.org/10.1021/nl0485049}},
doi = {{10.1021/nl0485049}},
volume = {{4}},
year = {{2004}},
}