Martin Persson (Former)
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- 2009
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Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2006
-
Mark
Electronic structure of free-standing GaAs/AlGaAs nanowire superlattices
(
- Contribution to journal › Article
-
Mark
Electronic structure of [100]-oriented free-standing InAs and InP nanowires with square and rectangular cross sections
(
- Contribution to journal › Article
- 2005
-
Mark
Electronic structure and giant polarization anisotropy in optical transition of free-standing semiconductor nanowires
2005) China Intl Conf on Nanosci and Technol, Beijing, China (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electronic structure and giant polarization anisotropy in optical transition of free-standing semiconductor nanowires
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Unified treatment of fluorescence and Raman scattering processes near metal surfaces
(
- Contribution to journal › Article
-
Mark
Electronic structure of [100]-oriented free-standing semiconductor nanowires
(
- Contribution to journal › Article
-
Mark
Theoretical study of electronic structure and optical properties of semiconductor nanostructures
2004)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Theory of electronic structure in nanowires
2004) NSF/SSF Workshop on Nanoscience and Nanotechnology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Giant polarization anisotropy in optical transitions of free-standing InP nanowires
(
- Contribution to journal › Article