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Common structure in amorphised compound semiconductors

Ridgway, MC ; Azevedo, GD ; Glover, Chris LU ; Yu, KM and Foran, GJ (2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 199. p.235-239
Abstract
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution... (More)
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved. (Less)
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
amorphous compound semiconductors, ion implantation
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
199
pages
235 - 239
publisher
Elsevier
external identifiers
  • wos:000180925400047
  • scopus:0037237788
ISSN
0168-583X
DOI
10.1016/S0168-583X(02)01531-8
language
English
LU publication?
yes
id
49eec931-3fae-4d2f-a921-7d96d836ea44 (old id 318516)
date added to LUP
2016-04-01 15:49:13
date last changed
2022-01-28 07:22:16
@article{49eec931-3fae-4d2f-a921-7d96d836ea44,
  abstract     = {{Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved.}},
  author       = {{Ridgway, MC and Azevedo, GD and Glover, Chris and Yu, KM and Foran, GJ}},
  issn         = {{0168-583X}},
  keywords     = {{amorphous compound semiconductors; ion implantation}},
  language     = {{eng}},
  pages        = {{235--239}},
  publisher    = {{Elsevier}},
  series       = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}},
  title        = {{Common structure in amorphised compound semiconductors}},
  url          = {{http://dx.doi.org/10.1016/S0168-583X(02)01531-8}},
  doi          = {{10.1016/S0168-583X(02)01531-8}},
  volume       = {{199}},
  year         = {{2003}},
}