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High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

Egard, Mikael LU ; Ohlsson, Lars LU ; Borg, Mattias LU ; Lenrick, Filip LU ; Wallenberg, Reine LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2011) IEEE International Electron Devices Meeting (IEDM) In 2011 IEEE International Electron Devices Meeting (IEDM)
Abstract
In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2011 IEEE International Electron Devices Meeting (IEDM)
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE International Electron Devices Meeting (IEDM)
external identifiers
  • WOS:000300015300076
language
English
LU publication?
yes
id
d9452a9e-8bba-431a-a077-d1b8c4bc0d96 (old id 2494429)
date added to LUP
2012-06-04 14:29:45
date last changed
2016-04-16 08:47:49
@misc{d9452a9e-8bba-431a-a077-d1b8c4bc0d96,
  abstract     = {In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.},
  author       = {Egard, Mikael and Ohlsson, Lars and Borg, Mattias and Lenrick, Filip and Wallenberg, Reine and Wernersson, Lars-Erik and Lind, Erik},
  language     = {eng},
  publisher    = {ARRAY(0x94e82b0)},
  series       = {2011 IEEE International Electron Devices Meeting (IEDM)},
  title        = {High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET},
  year         = {2011},
}