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Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues

Zakharov, Alexei LU ; Maximov, Ivan LU ; Holmqvist, T.; Montelius, Lars LU and Lindau, Ingolf LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO<sub>2</sub> surfaces after electron beam exposure and resist development. The attenuation of the SiO<sub>2</sub> valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of... (More)
We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO<sub>2</sub> surfaces after electron beam exposure and resist development. The attenuation of the SiO<sub>2</sub> valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices (Less)
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Si2p photoelectrons, film thickness, SiO<sub>2</sub> valence band, electron beam exposure, SiO<sub>2</sub> surfaces, surface sensitivity, photoelectron spectromicroscopy, PMMA resist residues, attenuation, electronic devices technology, 0.7 nm, 0.5 nm, SiO<sub>2</sub>-Si, SiO<sub>2</sub>
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
b1a13bdc-5a54-4f51-ba6c-6ce7dc2b68b2 (old id 610791)
date added to LUP
2007-11-29 13:10:24
date last changed
2016-04-16 09:31:03
@misc{b1a13bdc-5a54-4f51-ba6c-6ce7dc2b68b2,
  abstract     = {We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO&lt;sub&gt;2&lt;/sub&gt; surfaces after electron beam exposure and resist development. The attenuation of the SiO&lt;sub&gt;2&lt;/sub&gt; valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices},
  author       = {Zakharov, Alexei and Maximov, Ivan and Holmqvist, T. and Montelius, Lars and Lindau, Ingolf},
  keyword      = {Si2p photoelectrons,film thickness,SiO<sub>2</sub> valence band,electron beam exposure,SiO<sub>2</sub> surfaces,surface sensitivity,photoelectron spectromicroscopy,PMMA resist residues,attenuation,electronic devices technology,0.7 nm,0.5 nm,SiO<sub>2</sub>-Si,SiO<sub>2</sub>},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0x11aa21d8)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues},
  year         = {2002},
}