Resonant Tunneling Permeable Base Transistor for RF applications
(2003) 2003 International Semiconductor Device Research Symposium p.487-488- Abstract
- A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/612108
- author
- Lind, Erik LU ; Lindström, Peter LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2003
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- molecular beam epitaxy, double barrier heterostructure, room temperature, semiconductor heterostructure, metallic elements, resonant tunneling permeable base transistor, tungsten, W, AlGaAs-InGaAs, 30 nm, 293 to 298 K, electron beam lithography
- host publication
- 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)
- pages
- 487 - 488
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2003 International Semiconductor Device Research Symposium
- conference location
- Washington, DC, United States
- conference dates
- 2003-12-10 - 2003-12-12
- external identifiers
-
- scopus:84945309213
- ISBN
- 0-7803-8139-4
- DOI
- 10.1109/ISDRS.2003.1272209
- language
- English
- LU publication?
- yes
- id
- 58f62d8c-89fc-4a83-a7d3-c2104bdcc086 (old id 612108)
- date added to LUP
- 2016-04-04 12:11:22
- date last changed
- 2024-01-13 03:55:05
@inproceedings{58f62d8c-89fc-4a83-a7d3-c2104bdcc086, abstract = {{A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature}}, author = {{Lind, Erik and Lindström, Peter and Wernersson, Lars-Erik}}, booktitle = {{2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)}}, isbn = {{0-7803-8139-4}}, keywords = {{molecular beam epitaxy; double barrier heterostructure; room temperature; semiconductor heterostructure; metallic elements; resonant tunneling permeable base transistor; tungsten; W; AlGaAs-InGaAs; 30 nm; 293 to 298 K; electron beam lithography}}, language = {{eng}}, pages = {{487--488}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Resonant Tunneling Permeable Base Transistor for RF applications}}, url = {{http://dx.doi.org/10.1109/ISDRS.2003.1272209}}, doi = {{10.1109/ISDRS.2003.1272209}}, year = {{2003}}, }