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Resonant Tunneling Permeable Base Transistor for RF applications

Lind, Erik LU ; Lindström, Peter LU and Wernersson, Lars-Erik LU (2003) 2003 International Semiconductor Device Research Symposium In 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741) p.487-488
Abstract
A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
molecular beam epitaxy, double barrier heterostructure, room temperature, semiconductor heterostructure, metallic elements, resonant tunneling permeable base transistor, tungsten, W, AlGaAs-InGaAs, 30 nm, 293 to 298 K, electron beam lithography
in
2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)
pages
487 - 488
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2003 International Semiconductor Device Research Symposium
external identifiers
  • Scopus:84945309213
ISBN
0-7803-8139-4
DOI
10.1109/ISDRS.2003.1272209
language
English
LU publication?
yes
id
58f62d8c-89fc-4a83-a7d3-c2104bdcc086 (old id 612108)
date added to LUP
2007-11-30 12:37:13
date last changed
2016-10-13 04:50:07
@misc{58f62d8c-89fc-4a83-a7d3-c2104bdcc086,
  abstract     = {A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature},
  author       = {Lind, Erik and Lindström, Peter and Wernersson, Lars-Erik},
  isbn         = {0-7803-8139-4},
  keyword      = {molecular beam epitaxy,double barrier heterostructure,room temperature,semiconductor heterostructure,metallic elements,resonant tunneling permeable base transistor,tungsten,W,AlGaAs-InGaAs,30 nm,293 to 298 K,electron beam lithography},
  language     = {eng},
  pages        = {487--488},
  publisher    = {ARRAY(0x7a1b798)},
  series       = {2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)},
  title        = {Resonant Tunneling Permeable Base Transistor for RF applications},
  url          = {http://dx.doi.org/10.1109/ISDRS.2003.1272209},
  year         = {2003},
}