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Topological material in the III--V family : Heteroepitaxial InBi on InAs

Nicolaï, Laurent ; Minár, Ján ; Richter, Maria Christine ; Heckmann, Olivier ; Mariot, Jean-Michel ; Djukic, Uros ; Adell, Johan LU ; Leandersson, Mats LU ; Sadowski, Janusz LU and Braun, Jürgen , et al. (2024) In Physical Review Research 6(4).
Abstract
InBi(0 0 1) is formed epitaxially on InAs(1 1 1)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(0 0 1) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the... (More)
InBi(0 0 1) is formed epitaxially on InAs(1 1 1)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(0 0 1) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(0 0 1) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Research
volume
6
issue
4
article number
043116
pages
11 pages
publisher
American Physical Society
external identifiers
  • scopus:85209728636
ISSN
2643-1564
DOI
10.1103/PhysRevResearch.6.043116
language
English
LU publication?
yes
id
0acdb96a-30c1-4c43-90b5-44224d3a91df
date added to LUP
2024-11-11 08:03:33
date last changed
2025-04-04 14:23:16
@article{0acdb96a-30c1-4c43-90b5-44224d3a91df,
  abstract     = {{InBi(0 0 1) is formed epitaxially on InAs(1 1 1)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(0 0 1) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(0 0 1) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture.}},
  author       = {{Nicolaï, Laurent and Minár, Ján and Richter, Maria Christine and Heckmann, Olivier and Mariot, Jean-Michel and Djukic, Uros and Adell, Johan and Leandersson, Mats and Sadowski, Janusz and Braun, Jürgen and Ebert, Hubert and Denlinger, Jonathan D. and Vobornik, Ivana and Fujii, Jun and Šutta, Pavol and Bell, Gavin R. and Gmitra, Martin and Hricovini, Karol}},
  issn         = {{2643-1564}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{4}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Research}},
  title        = {{Topological material in the III--V family : Heteroepitaxial InBi on InAs}},
  url          = {{http://dx.doi.org/10.1103/PhysRevResearch.6.043116}},
  doi          = {{10.1103/PhysRevResearch.6.043116}},
  volume       = {{6}},
  year         = {{2024}},
}