Tailoring Auger Recombination Dynamics in CsPbI3 Perovskite Nanocrystals via Transition Metal Doping
(2024) In Nano Letters 24(27). p.8386-8393- Abstract
Auger recombination is a pivotal process for semiconductor nanocrystals (NCs), significantly affecting charge carrier generation and collection in optoelectronic devices. This process depends mainly on the NCs’ electronic structures. In our study, we investigated Auger recombination dynamics in manganese (Mn2+)-doped CsPbI3 NCs using transient absorption (TA) spectroscopy combined with theoretical and experimental structural characterization. Our results show that Mn2+ doping accelerates Auger recombination, reducing the biexciton lifetime from 146 to 74 ps with increasing Mn doping concentration up to 10%. This accelerated Auger recombination in Mn-doped NCs is attributed to increased band edge wave... (More)
Auger recombination is a pivotal process for semiconductor nanocrystals (NCs), significantly affecting charge carrier generation and collection in optoelectronic devices. This process depends mainly on the NCs’ electronic structures. In our study, we investigated Auger recombination dynamics in manganese (Mn2+)-doped CsPbI3 NCs using transient absorption (TA) spectroscopy combined with theoretical and experimental structural characterization. Our results show that Mn2+ doping accelerates Auger recombination, reducing the biexciton lifetime from 146 to 74 ps with increasing Mn doping concentration up to 10%. This accelerated Auger recombination in Mn-doped NCs is attributed to increased band edge wave function overlap of excitons and a larger density of final states of Auger recombination due to Mn orbital involvement. Moreover, Mn doping reduces the dielectric screening of the excitons, which also contributes to the accelerated Auger recombination. Our study demonstrates the potential of element doping to regulate Auger recombination rates by modifying the materials’ electronic structure.
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- author
- Meng, Jie LU ; Lan, Zhenyun ; Lin, Weihua LU ; Castelli, Ivano E. ; Pullerits, Tönu LU and Zheng, Kaibo LU
- organization
- publishing date
- 2024-07
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Auger recombination, dielectric screening, electronic structures, halide perovskite, Mn doping
- in
- Nano Letters
- volume
- 24
- issue
- 27
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:38934731
- scopus:85197578161
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.4c02032
- language
- English
- LU publication?
- yes
- id
- 120987b7-71f6-4b9f-9ab7-0c4fee09fad4
- date added to LUP
- 2024-09-24 15:46:31
- date last changed
- 2024-10-08 19:39:01
@article{120987b7-71f6-4b9f-9ab7-0c4fee09fad4, abstract = {{<p>Auger recombination is a pivotal process for semiconductor nanocrystals (NCs), significantly affecting charge carrier generation and collection in optoelectronic devices. This process depends mainly on the NCs’ electronic structures. In our study, we investigated Auger recombination dynamics in manganese (Mn<sup>2+</sup>)-doped CsPbI<sub>3</sub> NCs using transient absorption (TA) spectroscopy combined with theoretical and experimental structural characterization. Our results show that Mn<sup>2+</sup> doping accelerates Auger recombination, reducing the biexciton lifetime from 146 to 74 ps with increasing Mn doping concentration up to 10%. This accelerated Auger recombination in Mn-doped NCs is attributed to increased band edge wave function overlap of excitons and a larger density of final states of Auger recombination due to Mn orbital involvement. Moreover, Mn doping reduces the dielectric screening of the excitons, which also contributes to the accelerated Auger recombination. Our study demonstrates the potential of element doping to regulate Auger recombination rates by modifying the materials’ electronic structure.</p>}}, author = {{Meng, Jie and Lan, Zhenyun and Lin, Weihua and Castelli, Ivano E. and Pullerits, Tönu and Zheng, Kaibo}}, issn = {{1530-6984}}, keywords = {{Auger recombination; dielectric screening; electronic structures; halide perovskite; Mn doping}}, language = {{eng}}, number = {{27}}, pages = {{8386--8393}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Tailoring Auger Recombination Dynamics in CsPbI<sub>3</sub> Perovskite Nanocrystals via Transition Metal Doping}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.4c02032}}, doi = {{10.1021/acs.nanolett.4c02032}}, volume = {{24}}, year = {{2024}}, }