Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)
(2009) In Surface Science 603(15). p.87-90- Abstract
- The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1457634
- author
- Virojanadara, C. ; Yakimova, R. ; Osiecki, J.R. ; Syväjärvi, M. ; Uhrberg, R.I.G. ; Johansson, L.I. and Zakharov, Alexei LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Surface Science
- volume
- 603
- issue
- 15
- pages
- 87 - 90
- publisher
- Elsevier
- external identifiers
-
- wos:000268371000001
- scopus:67649354231
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2009.05.005
- language
- English
- LU publication?
- yes
- id
- 6ece5bbb-befa-400c-9235-a465c0cb3d35 (old id 1457634)
- date added to LUP
- 2016-04-01 15:04:55
- date last changed
- 2022-04-22 06:42:17
@article{6ece5bbb-befa-400c-9235-a465c0cb3d35, abstract = {{The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.}}, author = {{Virojanadara, C. and Yakimova, R. and Osiecki, J.R. and Syväjärvi, M. and Uhrberg, R.I.G. and Johansson, L.I. and Zakharov, Alexei}}, issn = {{0039-6028}}, language = {{eng}}, number = {{15}}, pages = {{87--90}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)}}, url = {{http://dx.doi.org/10.1016/j.susc.2009.05.005}}, doi = {{10.1016/j.susc.2009.05.005}}, volume = {{603}}, year = {{2009}}, }