Defect Structure of High-Temperature-Grown GaMnSb/GaSb
(2010) 8th National Meeting of the Synchrotron Radiation Users 117(2). p.341-343- Abstract
- GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1617150
- author
- Romanowski, P. ; Bak-Misiuk, J. ; Dynowska, E. ; Domagala, J. Z. ; Sadowski, Janusz LU ; Wojciechowski, T. ; Barcz, A. ; Jakiela, R. and Caliebe, W.
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Acta Physica Polonica A
- volume
- 117
- issue
- 2
- pages
- 341 - 343
- publisher
- Polish Academy of Sciences
- conference name
- 8th National Meeting of the Synchrotron Radiation Users
- conference location
- Podlesice, Poland
- conference dates
- 2009-09-24 - 2009-09-26
- external identifiers
-
- wos:000277950400020
- scopus:77949409286
- ISSN
- 0587-4246
- language
- English
- LU publication?
- yes
- id
- 027b04da-c39c-4777-8e11-50b02cd4ca00 (old id 1617150)
- alternative location
- http://info.ifpan.edu.pl/APP/
- date added to LUP
- 2016-04-01 14:18:33
- date last changed
- 2022-03-31 14:53:41
@inproceedings{027b04da-c39c-4777-8e11-50b02cd4ca00,
abstract = {{GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.}},
author = {{Romanowski, P. and Bak-Misiuk, J. and Dynowska, E. and Domagala, J. Z. and Sadowski, Janusz and Wojciechowski, T. and Barcz, A. and Jakiela, R. and Caliebe, W.}},
booktitle = {{Acta Physica Polonica A}},
issn = {{0587-4246}},
language = {{eng}},
number = {{2}},
pages = {{341--343}},
publisher = {{Polish Academy of Sciences}},
title = {{Defect Structure of High-Temperature-Grown GaMnSb/GaSb}},
url = {{http://info.ifpan.edu.pl/APP/}},
volume = {{117}},
year = {{2010}},
}