Transient studies on InAs/HfO2 nanowire capacitors
(2011) In Applied Physics Letters 98(1).- Abstract
- Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1790859
- author
- Astromskas, Gvidas LU ; Storm, Kristian LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 98
- issue
- 1
- article number
- 013501
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000286009800077
- scopus:78651325889
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3533379
- language
- English
- LU publication?
- yes
- id
- e4010eff-8000-4a9d-a4c4-dcc19826831d (old id 1790859)
- date added to LUP
- 2016-04-01 11:05:19
- date last changed
- 2023-08-31 18:20:49
@article{e4010eff-8000-4a9d-a4c4-dcc19826831d, abstract = {{Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]}}, author = {{Astromskas, Gvidas and Storm, Kristian and Wernersson, Lars-Erik}}, issn = {{0003-6951}}, language = {{eng}}, number = {{1}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Transient studies on InAs/HfO2 nanowire capacitors}}, url = {{http://dx.doi.org/10.1063/1.3533379}}, doi = {{10.1063/1.3533379}}, volume = {{98}}, year = {{2011}}, }