Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
(2011) In Physical Review B (Condensed Matter and Materials Physics) 83(19).- Abstract
- Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and... (More)
- Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1985837
- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 83
- issue
- 19
- publisher
- American Physical Society
- external identifiers
-
- wos:000291089600017
- scopus:79961122962
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.83.195329
- language
- English
- LU publication?
- yes
- id
- f5bd9392-ad7c-4808-b8de-52cf8f717371 (old id 1985837)
- date added to LUP
- 2016-04-01 14:04:45
- date last changed
- 2022-01-27 22:44:32
@article{f5bd9392-ad7c-4808-b8de-52cf8f717371, abstract = {{Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods.}}, author = {{Punkkinen, M. P. J. and Laukkanen, P. and Lang, J. and Kuzmin, M. and Tuominen, M. and Tuominen, V. and Dahl, J. and Pessa, M. and Guina, M. and Kokko, K. and Sadowski, Janusz and Johansson, B. and Vayrynen, I. J. and Vitos, L.}}, issn = {{1098-0121}}, language = {{eng}}, number = {{19}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces}}, url = {{http://dx.doi.org/10.1103/PhysRevB.83.195329}}, doi = {{10.1103/PhysRevB.83.195329}}, volume = {{83}}, year = {{2011}}, }