III-V device integration on Si using template-assisted selective epitaxy
(2015) 73rd Annual Device Research Conference, DRC 2015 2015-August. p.255-256- Abstract
High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall... (More)
High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall measurements.
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- author
- Schmid, Heinz ; Borg, Mattias LU ; Moselund, Kirsten ; Gignac, Lynne ; Breslin, Chris ; Bruley, John ; Cutaia, Davide and Riel, Heike
- publishing date
- 2015-08-03
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Epitaxial growth
- host publication
- Device Research Conference - Conference Digest, DRC
- volume
- 2015-August
- article number
- 7175666
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 73rd Annual Device Research Conference, DRC 2015
- conference location
- Columbus, United States
- conference dates
- 2015-06-21 - 2015-06-24
- external identifiers
-
- scopus:84957666166
- ISBN
- 9781467381345
- DOI
- 10.1109/DRC.2015.7175666
- language
- English
- LU publication?
- no
- id
- 1ac607c6-6cf0-4020-8780-1330c576a656
- date added to LUP
- 2016-04-20 10:28:05
- date last changed
- 2022-05-02 02:37:27
@inproceedings{1ac607c6-6cf0-4020-8780-1330c576a656, abstract = {{<p>High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall measurements.</p>}}, author = {{Schmid, Heinz and Borg, Mattias and Moselund, Kirsten and Gignac, Lynne and Breslin, Chris and Bruley, John and Cutaia, Davide and Riel, Heike}}, booktitle = {{Device Research Conference - Conference Digest, DRC}}, isbn = {{9781467381345}}, keywords = {{Epitaxial growth}}, language = {{eng}}, month = {{08}}, pages = {{255--256}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{III-V device integration on Si using template-assisted selective epitaxy}}, url = {{http://dx.doi.org/10.1109/DRC.2015.7175666}}, doi = {{10.1109/DRC.2015.7175666}}, volume = {{2015-August}}, year = {{2015}}, }