Dual-gate induced InP nanowire diode
(2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) 1399. p.279-280- Abstract
- Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2493678
- author
- Storm, Kristian LU ; Nylund, Gustav LU ; Borgström, Magnus LU ; Wallentin, Jesper LU ; Fasth, Carina LU ; Thelander, Claes LU and Samuelson, Lars LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Fermi level tuning, InP, wrap-gate, nanowire
- host publication
- Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- volume
- 1399
- pages
- 279 - 280
- publisher
- American Institute of Physics (AIP)
- conference name
- 30th International Conference on the Physics of Semiconductors (ICPS-30)
- conference location
- Seoul, Korea, Republic of
- conference dates
- 2010-07-25 - 2010-07-30
- external identifiers
-
- wos:000301053000124
- scopus:84855497453
- ISSN
- 1551-7616
- 0094-243X
- DOI
- 10.1063/1.3666362
- language
- English
- LU publication?
- yes
- id
- e418ee94-467d-4242-bbff-38cdbf15520d (old id 2493678)
- date added to LUP
- 2016-04-01 09:53:11
- date last changed
- 2024-01-06 02:19:08
@inproceedings{e418ee94-467d-4242-bbff-38cdbf15520d, abstract = {{Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.}}, author = {{Storm, Kristian and Nylund, Gustav and Borgström, Magnus and Wallentin, Jesper and Fasth, Carina and Thelander, Claes and Samuelson, Lars}}, booktitle = {{Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors}}, issn = {{1551-7616}}, keywords = {{Fermi level tuning; InP; wrap-gate; nanowire}}, language = {{eng}}, pages = {{279--280}}, publisher = {{American Institute of Physics (AIP)}}, title = {{Dual-gate induced InP nanowire diode}}, url = {{http://dx.doi.org/10.1063/1.3666362}}, doi = {{10.1063/1.3666362}}, volume = {{1399}}, year = {{2011}}, }