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Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Bak-Misiuk, J. ; Dynowska, E. ; Romanowski, P. ; Misiuk, A. ; Sadowski, Janusz LU and Caliebe, W. (2012) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 121(4). p.903-905
Abstract
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1-xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 degrees C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
volume
121
issue
4
pages
903 - 905
publisher
Institute of Physics, Polish Academy of Sciences
external identifiers
  • wos:000303970300038
  • scopus:84860346871
ISSN
0587-4246
language
English
LU publication?
yes
id
086f6f78-d884-488c-83bd-59febffe0763 (old id 2813093)
alternative location
http://przyrbwn.icm.edu.pl/APP/ABSTR/121/a121-4-209.html
date added to LUP
2016-04-01 13:40:44
date last changed
2022-01-27 20:26:16
@article{086f6f78-d884-488c-83bd-59febffe0763,
  abstract     = {{Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1-xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 degrees C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs}},
  author       = {{Bak-Misiuk, J. and Dynowska, E. and Romanowski, P. and Misiuk, A. and Sadowski, Janusz and Caliebe, W.}},
  issn         = {{0587-4246}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{903--905}},
  publisher    = {{Institute of Physics, Polish Academy of Sciences}},
  series       = {{Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics}},
  title        = {{Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs}},
  url          = {{http://przyrbwn.icm.edu.pl/APP/ABSTR/121/a121-4-209.html}},
  volume       = {{121}},
  year         = {{2012}},
}