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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Andresen, SE ; Sorensen, BS ; Rasmussen, FB ; Lindelof, PE ; Sadowski, Janusz LU ; Guertler, CM and Bland, JAC (2003) In Applied Physics Reviews 94(6). p.3990-3994
Abstract
We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
94
issue
6
pages
3990 - 3994
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000185419600045
  • scopus:0141886914
ISSN
1931-9401
DOI
10.1063/1.1602945
language
English
LU publication?
yes
id
7a7a9015-7287-4d11-af88-bb2e43e7e120 (old id 300149)
date added to LUP
2016-04-01 12:18:57
date last changed
2022-01-27 01:56:11
@article{7a7a9015-7287-4d11-af88-bb2e43e7e120,
  abstract     = {{We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.}},
  author       = {{Andresen, SE and Sorensen, BS and Rasmussen, FB and Lindelof, PE and Sadowski, Janusz and Guertler, CM and Bland, JAC}},
  issn         = {{1931-9401}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{3990--3994}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Reviews}},
  title        = {{Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface}},
  url          = {{http://dx.doi.org/10.1063/1.1602945}},
  doi          = {{10.1063/1.1602945}},
  volume       = {{94}},
  year         = {{2003}},
}