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Surface Studies by Low-Energy Electron Diffraction and Reflection High-Energy-Electron Diffraction

Laukkanen, Pekka ; Sadowski, Janusz LU and Guina, Mircea (2012) 150. p.1-21
Abstract
In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to provide an overview of the exploitation of these instrumental methods for analyzing the surfaces of technologically important III–V compound semiconductors. In particular, the interpretation of LEED and RHEED patterns is discussed for the most representative reconstructions of GaAs(100), GaInAsN(100), and Bi-stabilized III–V(100) surfaces. Other application examples concern the use of RHEED for optimizing the growth conditions and growth rates used in molecular beam epitaxy of III–V device heterostructures.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Low energy electron diffraction, reflection high energy electron diffraction, semiconductor surfaces, surface reconstruction
host publication
Springer Series in Materials Science
editor
Patane, A. and Balkan, N.
volume
150
pages
1 - 21
publisher
Springer
external identifiers
  • other:DOI: 10.1007/978-3-642-23351-7_1
  • scopus:84884088194
language
English
LU publication?
yes
id
7ef1ecc8-73ce-4aed-b8cb-969292fae30f (old id 3128705)
date added to LUP
2016-04-04 10:22:47
date last changed
2025-04-04 14:34:22
@inbook{7ef1ecc8-73ce-4aed-b8cb-969292fae30f,
  abstract     = {{In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to provide an overview of the exploitation of these instrumental methods for analyzing the surfaces of technologically important III–V compound semiconductors. In particular, the interpretation of LEED and RHEED patterns is discussed for the most representative reconstructions of GaAs(100), GaInAsN(100), and Bi-stabilized III–V(100) surfaces. Other application examples concern the use of RHEED for optimizing the growth conditions and growth rates used in molecular beam epitaxy of III–V device heterostructures.}},
  author       = {{Laukkanen, Pekka and Sadowski, Janusz and Guina, Mircea}},
  booktitle    = {{Springer Series in Materials Science}},
  editor       = {{Patane, A. and Balkan, N.}},
  keywords     = {{Low energy electron diffraction; reflection high energy electron diffraction; semiconductor surfaces; surface reconstruction}},
  language     = {{eng}},
  pages        = {{1--21}},
  publisher    = {{Springer}},
  title        = {{Surface Studies by Low-Energy Electron Diffraction and Reflection High-Energy-Electron Diffraction}},
  volume       = {{150}},
  year         = {{2012}},
}