Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
(2002) In Nanotechnology 13(5). p.666-668- Abstract
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are... (More)
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/324398
- author
- Maximov, Ivan LU ; Carlberg, Patrick LU ; Wallin, Daniel LU ; Shorubalko, Ivan LU ; Seifert, Werner LU ; Xu, Hongqi LU ; Montelius, Lars LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 13
- issue
- 5
- pages
- 666 - 668
- publisher
- IOP Publishing
- external identifiers
-
- wos:000179070200027
- scopus:0036801415
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/13/5/325
- language
- English
- LU publication?
- yes
- id
- f6fbdbfd-ac3c-47af-b852-cd6cc2764798 (old id 324398)
- date added to LUP
- 2016-04-01 11:58:13
- date last changed
- 2022-02-25 23:57:09
@article{f6fbdbfd-ac3c-47af-b852-cd6cc2764798, abstract = {{We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.}}, author = {{Maximov, Ivan and Carlberg, Patrick and Wallin, Daniel and Shorubalko, Ivan and Seifert, Werner and Xu, Hongqi and Montelius, Lars and Samuelson, Lars}}, issn = {{0957-4484}}, language = {{eng}}, number = {{5}}, pages = {{666--668}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs}}, url = {{http://dx.doi.org/10.1088/0957-4484/13/5/325}}, doi = {{10.1088/0957-4484/13/5/325}}, volume = {{13}}, year = {{2002}}, }